Process for producing a gas detecting element
AssigneeNgk Spark Plug Co., Ltd.
InventorsAkio Takami, Thutomu Saito, Kazutoshi Tanaka
Life of this patent
Estimating the term…
Abstract
A gas detecting element including a semiconductor wafer formed of a transition-metal oxide with an electrode layer bonded to both sides of the wafer and a protective layer overlaid on the surface of the electrode layer. A metal lead wire is attached to each electrode layer by means of an electrically conductive adhesive wherein the region at which the metal lead wire is bonded to the electrode layer is reinforced by an insulating adhesive that covers the region. A process for producing such a gas detecting element is also disclosed.
Claims8
A process for producing a gas detecting element comprising the steps of:
- bonding electrode layers to both sides of a porous semiconductor wafer comprising primarily a transition-metal oxide, disposing a protective layer on the entire surface of said electrode layers except for regions where a metal lead wire is to be coupled to said electrode layers, dividing the wafer into individual unit wafers, heating said wafers for a predetermined time period at a predetermined temperature, coupling a metal lead wire to the surface of each said electrode layer in each said regions with an electrically conductive adhesive, and covering each said region with a reinforcing insulating material.
Dependencies are inferred from the claim text.