Process for producing coarse-grain crystalline/mono-crystalline metal and alloy films
AssigneeSiemens Aktiengesellschaft
InventorGuenther Menzel
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AssigneeSiemens Aktiengesellschaft
InventorGuenther Menzel
Estimating the term…
Coarse-grained crystalline or monocrystalline metal or alloy regions are produced on substrates composed of a material selected from the group consisting of a ceramic, a glass and silicon, and which are provided with a layer of an amorphous or disordered metallic film, for example tantalum, by controllably irradiating select regions of the amorphous film with a focused beam of thermal-energy and/or light-energy, such as obtained from a focused laser beam, while substantially simultaneously maintaining the temperature of such substrate at about the temperature utilized in depositing the amorphous film on the substrate, whereby crystallization seeds are generated at the point of beam irradiation and function as a starting point for the crystalline or monocrystalline front on the metallic surface. Via controlled beam guidance, as by a computer, over the amorphous metal coated substrate surface, the crystallization front is extended uniformly in a desired path along the irradiated surface. The process is useful in producing metallizations for integrated semiconductor circuits, manufacture of contact electrodes for silicon solar cells, etc.
In a method of producing specifically shaped coarse-grained crystalline or monocrystalline surfaces or lines in metal or alloy films on substrates composed of a material selected from the group consisting of ceramic, glass and silicon through the conversion of an amorphous film deposited at a temperature ranging from about room temperature to about -160.degree. C. on a surface of such substrate, the improvement comprising:
A method of producing metallizations for integrated semiconductor circuits, comprising:
A method of manufacturing contact electrodes for solar cells comprising:
Dependencies are inferred from the claim text.