Back to results
US 4,372,985 AGranted
Ion implantation for hard bubble suppression
AssigneeRockwell International Corporation
InventorRobert F. Bailey
Life of this patent
Estimating the term…
Abstract
A method for processing a magnetic bubble domain device for hard bubble suppression comprising the steps of providing a non-magnetic substrate; providing a thin layer of magnetic material capable of supporting magnetic bubble domains on a first major surface of the substrate; and directing a beam of ions consisting essentially of a nongaseous ion at the substrate.
Claims3
A method for processing a magnetic bubble domain device comprising the steps of:
- providing a non-magnetic substrate;
- providing a thin layer of magnetic material capable of supporting magnetic bubble domains on a first major surface of said substrate;
- directing a beam of ions consisting essentially of a non-gaseous element at said entire layer so that said ions are implanted at a depth in excess of 500 angstroms while minimizing the compressive stress in the implanted layer, and thereby minimizing the change in stress-induced anisotropy of the ion-damaged implanted layer, said entire layer still being capable of supporting magnetic bubble domains while hard bubble domains are suppressed after ion implantation.
Dependencies are inferred from the claim text.