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US 4,371,861 AGranted
Ni-fe thin-film temperature sensor
AssigneeHoneywell Inc.
InventorsMona Abdelrahman, Ralph W. Fuchs, James O. Holman, Robert G. Johnson, M. Walter Scott
Life of this patent
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Abstract
A permalloy thin film temperature sensing element in which the NiFe film material is deposited on a substrate in very narrow lines less than about 15 .mu.m wide and in film thicknesses in excess of about 400A.degree. preferably in the range of 1600.degree.-3200A.degree..
Claims12
A temperature sensing element comprising:
- an insulating substrate;
- an isolating layer on the surface of said substrate;
- a long narrow thin film resistive path of NiFe deposited on the surface of said isolating layer, said resistive path having a narrow width of less than about 15 .mu.m and said resistive path having a thickness in excess of about 400 A.degree., said NiFe path having a desired temperature coefficient of resistance and by reason of said narrow width and said deposition thickness being relatively insensitive to magnetic field intensity;
- and,
- a passivating layer overlaying the resistive material.
2 more elements
A temperature sensing element comprising:
- an insulating substrate;
- and,
- a long narrow thin-film resistive path of the NiFe deposited on the surface of a said substrate, said resistive path having a narrow width in the range of less than about 15 .mu.m and said resistive path having a thickness in excess of about 400 A.degree., said NiFe path having a desired temperature coefficient of resistance and by reason of said narrow width and said deposition thickness being relatively insensitive to magnetic field intensity.
Dependencies are inferred from the claim text.