Method of annealing implanted semiconductors by lasers
AssigneeBernard B. Katz
InventorJeffrey I. Levatter
Life of this patent
Estimating the term…
Abstract
A high power excimer laser emits a pulsed output at a high repetition rate in the ultraviolet wavelength region and a uniform power output across the laser beam. By subjecting doped silicon wafers to the pulsed laser output, epitaxial regrowth of silicon crystals can be induced to repair damage to the silicon crystal structure which normally occurs during implantation of the dopant materials.
Claims12
A method of producing solar voltaic cells comprising implanting a dopant material into a photo sensitive semiconductor substrate to create a P-N junction, and annealing said substrate with a pulsed laser beam having a wavelength predominantly in the ultraviolet region, a suitable beam annealing energy of at least two joules per pulse, a pulse repetition rate of at least 100 pulses per second and a uniformity of beam pulse output that varies by no more than five percent across the area of beam output.
A method of producing semiconductor devices comprising implanting a dopant material into a semiconductor substrate to create a P-N junction, and annealing said substrate with a pulsed laser beam having a wavelength predominently in the ultraviolet region, a beam energy of at least two joules per second, a pulse repetition rate of at least 100 pulses per second and a uniformity of beam pulse output that varies by no more than five percent across the area of beam output.
Dependencies are inferred from the claim text.