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AssigneeHitachi, Ltd.
InventorsMotohisa Hirao, Michiharu Nakamura, Atsutoshi Doi, Shinji Tsuji, Yutaka Takeda, Takao Mori
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Disclosed herein is a semiconductor laser device including at least an active region consisting of a semiconductor material and a semiconductor region consisting of a material having a different composition from that of the active region and confining the active region, wherein at least one p-n junction is formed inside the confining region in parallel to the active region and a current flowing through the active region at a field strength below an electric field causing degradation of the semiconductor laser device is allowed to flow through regions other than the active region via the p-n junction by controlling the impurity concentration of the region having the p-n junction. The semiconductor laser device does not undergo catastrophic degradation even when applied with a current higher than a rated value.
In a semiconductor laser device including at least an active region comprised of a semiconductor material and a semiconductor region comprised of a material having a different composition from that of said active region and confining said active region, said semiconductor laser device characterized in that at least one p-n junction is formed inside said confining region in parallel to said active region, wherein the impurity concentration of said region having said p-n junction is set to permit at least a portion of a current flowing to said active region to flow through regions other than said active region via said p-n junction when said current reaches a predetermined level which is less than a level at which said current flow causes degradation of said semiconductor laser device.
Dependencies are inferred from the claim text.