Terraced substrate semiconductor laser

Abstract

A terraced-substrate structure semiconductor laser in accordance with the present invention comprises: a terrace-shaped semiconductor substrate having an upper face, a lower face and a step part disposed between said upper face and said lower face, a clad layer formed on said terrace shaped semiconductor substrate and including at least an upper part formed on said upper face and a step part having a triangular section and formed at a corner defined by said lower face and said step part, said step part being thicker than said upper part, an active layer formed on said first clad layer and including a horizontal upper part formed on said upper part of said first clad layer and an oblique lasing region formed oblique on said step part of said first clad layer, but excluding a lower horizontal part, hitherto formed on said lower face, a current injection electrode having a stripe shaped injection face disposed above said lasing region, the improvement is that said active layer is terminated substantially at a lower end of said oblique lasing region by etching away said lower horizontal part of the active layer and said clad layer at the part on said lower face, thereby limiting a path of injected current to enter only in said lasing region.

Dependencies are inferred from the claim text.