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US 4,365,216 AGranted
Surface-acoustic-wave device
AssigneeClarion Co., Ltd.
InventorsShoichi Minagawa, Takeshi Okamoto, Takamasa Sakai
Life of this patent
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Abstract
A surface-acoustic-wave device wherein a plurality of metal strips (S) are provided on a propagation path of surface acoustic wave which is formed in a laminate comprised of a piezoelectric layer (23) and a semiconductor (1), the metal strips are extended onto the semiconductor outside the propagation path of surface acoustic wave, and depletion layer capacitance non-linearity created on the semiconductor surface at a region where the metal strips are extended is used as a main factor of a parametric interaction.
Claims11
A surface-acoustic-wave device which comprises:
- a laminate formed of a piezoelectric layer and a semiconductor layer;
- a plurality of metal strips disposed on a propagation path of surface acoustic wave in said laminate;
- a pumping electrode disposed on said piezoelectric layer and on said propagation path of surface acoustic wave;
- and
- a means for applying a pumping voltage to said pumping electrode;
- each of said metal strips having a portion extending to said semiconductor layer in a region out of said propagation path of surface acoustic wave.
3 more elements
Dependencies are inferred from the claim text.