Semiconductor mounting and matching assembly
AssigneeAmerican Electronic Laboratories, Inc.
InventorRobert W. Shillady
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AssigneeAmerican Electronic Laboratories, Inc.
InventorRobert W. Shillady
Estimating the term…
A semiconductor mounting and matching assembly capable of performing over a frequency range to 20 GHz and higher comprising a coaxial transmission line having a first portion with a first end for receiving radio-frequency signals and providing an input impedance and a second portion with a second signal output end providing a termination characteristic impedance. A semiconductor diode which is hermetically sealed within and removable with the second portion is mounted at the second end and has a load resistance terminating the transmission line. The transmission line has a plurality of sections for providing elements of a network which transforms the input impedance and matches the termination characteristic impedance of the second end of the transmission line to the load resistance of the semiconductor device. The elements of the network are provided by the configurations and discontinuities of the sections of the transmission line and the capacitive and inductive properties provided by the semiconductor device, whereby the network incorporates therein the parasitic reaction elements of the semiconductor device so that said assembly transmits radio-frequency signals from its input end to the semiconductor device at its output end with low reflection and attenuation over a wide-band of frequencies.
A semiconductor mounting and matching assembly comprising a radio-frequency transmission line operating principally in the TEM mode having a first end for receiving radio-frequency signals with a given first characteristic impedance, a second end with a second characteristic impedance, and a plurality of sections between its first and second ends having configurations and discontinuities providing reactive elements, a semiconductor device mounted at the second end of the transmission line having an impedance which differs from the first characteristic impedance of the transmission line and providing a load resistance terminating the transmission line at its second end, and a network which transforms the impedance between the first and second ends of the transmission line and matches the load resistance of the semiconductor device to the first characteristic impedance comprising the reactive elements provided by the sections of the transmission line and the capacitive and inductive reactance properties provided respectively by the junction capacitance and connecting lead means of the semiconductor device at the second end of the transmission line, the reactive elements of the transmission line at its second end accommodating the reactance properties of the semiconductor device so that the network incorporates therein the reactance properties of the semiconductor device and such reactance properties are not an effective part of the load terminating the transmission line at its second end, whereby said assembly transmits radio-frequency signals from its input end to the semiconductor device at its second end with low reflection and attenuation over a wide-band of frequencies.
A semiconductor mounting and matching assembly comprising a coaxial transmission line having a first end for receiving radio-frequency signals and providing an input impedance, a second end having a second characteristic impedance, and a plurality of sections between its first and second ends having configurations and discontinuities providing reactive elements, a semiconductor diode mounted at the second end of the transmission line having an impedance which differs from the input impedance of the first end of the transmission line and including a load resistance terminating the transmission line at its second end, and a network which transforms the impedance between the first and second ends of the transmission line and matches the load resistance of the semiconductor diode to the input impedance comprising the reactive elements provided by the sections of the transmission line and the capacitive and inductive reactance properties provided respectively by the junction capacitance and connecting lead means of the semiconductor diode at the second end of the transmission line, the reactive elements of the transmission line at its second end accommodating the reactance properties of the semiconductor diode so that the network incorporates therein the reactance properties of the semiconductor diode and such reactance properties are not an effective part of the load terminating the transmission line, whereby said assembly transmits radio-frequency signals from its input end to the semiconductor device at its output end with low reflection and attenuation over a wide-band of frequencies.
Dependencies are inferred from the claim text.