Method for fabricating a solid-state imaging device using photoconductive film
AssigneeHitachi, Ltd.
InventorsNorio Koike, Toru Baji, Toshihisa Tsukada, Hideaki Yamamoto
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Abstract
A method for fabricating a solid-state imaging device using photoconductive film, comprising the step of depositing a photoconductive material onto a scanner IC by the use of a shield plate, the scanner IC including vertical switching MOS transistors and horizontal switching MOS transistors arrayed in the form of a matrix and vertical and horizontal scanning shift registers for scanning the vertical and horizontal switching MOS transistors respectively, the shield plate having an open part corresponding to a vertical switching MOS transistor array area.
Claims11
A method for fabricating solid-state imaging devices wherein a photoconductive film for photoelectric conversion to generate photocharges and a transparent electrode are stacked on a scanner integrated circuit in which switching elements in a two-dimensional array and scanning shift registers for scanning the switching elements are integrated, characterized by forming said photoconductive film by the steps of holding a shield plate which is open in only an area to form said photoconductive film, in close contact with said scanner integrated circuit or with some spacing therefrom, and depositing a photoconductive material onto said scanner integrated circuit, whereby said shield plate prevents deposition of photoconductive material on areas of said scanner integrated circuit not corresponding to the open part of the shield plate.
Dependencies are inferred from the claim text.