Fabrication of semiconductor devices including double annealing steps for radiation hardening
AssigneeBell Telephone Laboratories, Incorporated
InventorsAvid Kamgar, Ashok K. Sinha
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Abstract
A silicon device can be made more resistant to the destructive effects of ionizing radiation by a double annealing; the first annealing to a temperature of the order of 400 degrees C. in hydrogen, the second annealing also to a temperature of 400 degrees C. at a time when the device is not sealed against escape of hydrogen.
Claims20
A process for manufacturing a silicon semiconductor device in which the semiconductor is heated to a first elevated temperature and exposed to an ambient containing hydrogen, cooled in said ambient to a lower temperature, and then heated to a second elevated temperature,
- CHRACTERIZED IN THAT the device is pervious to hydrogen during a time interval while being cooled to said lower temperature.
In a process for manufacturing a semiconductive silicon device, the steps of:
- (a) heating the device to a first predetermined temperature;
- (b) cooling said device in the presence of hydrogen to a second, lower temperature;
- and,
- (c) heating said device to a third predetermined temperature, higher than the second temperature, and, maintaining the body at the third temperature, during a time interval when the device is not sealed against the escape of hydrogen therefrom.
Dependencies are inferred from the claim text.