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US 4,364,077 AGranted
P.sup.+ N Gallium phosphide photodiodes
AssigneeThe United States of America as represented by the Secretary of the Air Force
InventorAlice M. Chiang
Life of this patent
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Abstract
A photodiode detector apparatus having a Gallium Phosphide ion implantation junction thereon to provide high quantum efficiency at wavelengths equal to or less than 0.5 micron incident wavelength while utilizing a shallow junction.
Claims1
A photodiode detector apparatus with high quantum efficiency comprising in combination:
- a semiconductor body of Group III-V compound having a photoelectric-sensitive surface,
- a thin film deposition of a second group III-V compound atop said semiconductor body to form a p-n junction, said p-n junction forms a photodiode being highly responsive to upper-level ultraviolet light radiation, said p-n junction has a shallow junction depth, said photodiode has a quantum efficiency greater than 30% at a wavelength of 0.4 .mu.m, said photodiode is responsive to ultraviolet radiation having a wavelength smaller than 0.4 .mu.m, said photodiode junction is formed by a GaP ion implantation, and said photodiode junction depth equals 0.15 .mu.m.
Dependencies are inferred from the claim text.