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US 4,363,868 AGranted
Process of producing semiconductor devices by forming a silicon oxynitride layer by a plasma CVD technique which is employed in a selective oxidation process
AssigneeFujitsu Limited
InventorsKanetake Takasaki, Mamoru Maeda
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Abstract
A selective oxidation process for producing a semiconductor device comprises the step of depositing a silicon oxynitride layer directly on a silicon substrate by a plasma chemical vapor deposition method. After a selective oxidation of the silicon substrate, the silicon oxynitride layer is removed.
Claims4
A process for producing a semiconductor device comprising the steps of:
- forming a silicon oxynitride layer on a semiconductor substrate by a plasma chemical vapor deposition method;
- selectively etching said silicon oxynitride layer to expose a portion of said semiconductor substrate;
- oxidizing said portion of said semiconductor substrate to form an oxide layer, and
- removing the remaining silicon oxynitride layer by an etchant comprising a solution of hydrofluoric acid.
1 more element
Dependencies are inferred from the claim text.