Photomask and photomask blank
AssigneeDai Nippon Insatsu Kabushiki Kaisha
InventorSatoru Kaneki
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Abstract
In a low reflection type photomask (hard mask) having a chromium masking film provided, through or without an intermediary low reflection layer, on a transparent substrate and further having a low reflection layer provided on the chromium layer, use is made of a composite layer containing chromium oxide and chromium nitride as the low reflection layer. The composite layer is substantially equal in etching speed to the chromium film, and the photomask obtained is free from image deterioration caused by protrusions such as visors, burrs, or fractures, as observed in the photomasks of the prior art using chromium oxide films, and also has excellent durability.
Claims10
A photomask blank comprising a transparent substrate and a multi-layer masking film provided on the substrate, said multi-layer masking film comprising a layer of chromium and a composite layer of chromium oxide and chromium nitride laminated on said chromium layer.
A photomask comprising a transparent substrate and a patternized multi-layer masking film provided on the substrate, said multi-layer masking film comprising a layer of chromium and a composite layer of chromium oxide and chromium nitride laminated on said chromium layer.
Dependencies are inferred from the claim text.