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US 4,363,068 AGranted
Power FET short circuit protection
AssigneeSundstrand Corporation
InventorDennis A. Burns
Life of this patent
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Abstract
A protection circuit for a semiconductor device such as a field effect transistor is disclosed having an oscillator which is connected to both the gate turn on circuitry and to the drain-source circuit of the field effect transistor for sensing the voltage of the drain-source circuit and for turning off cyclically the field effect transistor upon the simultaneous occurrence of a gate turn on signal to the gate of the transistor and high drain-source voltage.
Claims8
A protection circuit for a field effect transistor comprising:
- a field effect transistor having a gate and a drain-source circuit;
- drain-source connecting means for connecting said drain-source circuit to a load and a source of voltage;
- switch means having first and second inputs and output means, said first input receiving a command signal for energizing said field effect transistor;
- gate connecting means connecting said output of said switch means to said gate of said field effect transistor;
- and,
- oscillator means connected to said drain-source circuit and to said second input of said switch means for cyclically operating said field effect transistor when both the voltage on said drain-source circuit exceeds a predetermined value and said field effect transistor receives said command signal.
3 more elements
Dependencies are inferred from the claim text.