Method for making semiconductor device
AssigneeHitachi, Ltd.
InventorsIchiro Imaizumi, Masatoshi Kimura, Keijiro Uehara
Life of this patent
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Abstract
A semiconductor device prepared by forming a silicon substrate of one conductor type having a surface of the (100) crystal plane, opening a rectangular window having sides parallel to the <100> crystal axis, etching the interior of the rectangular window with an anisotropic etching solution to form a dent, removing the oxide film and growing an epitaxial layer of a conductor type opposite to that of the substrate on the entire surface of the substrate, and masking the dent with an oxide film and etching the epitaxial layer with an anisotropic etching solution to flatten the surface of the epitaxial layer, and a method for making this semiconductor device.
Claims10
A method for preparing semiconductor devices, which comprises the steps of forming a layer of a substance acting as an etching mask on a substrate having a surface on the (100) crystal plane or on a plane inclined within 5.degree. against the (100) crystal plane, opening on said substrate layer a window having a polygonal shape having main sides parallel to at least one specific direction selected from the direction of the <100>
- crystal axis and directions inclined within 25.degree. against the <100>
- crystal axis, thereby forming an etching mask, etching the interior of said window with an anisotropic etching solution, thereby forming a substrate having a dent, removing said etching mask, epitaxially growing a semiconductor layer on the entire surface of said substrate while filling up said dent, masking a secondary dent formed by transfer of said dent of the substrate on said epitaxially grown semiconductor layer with a layer of a substance acting as an etching mask, and etching said semiconductor layer with an anisotropic etching solution to flatten the surface thereof.
Dependencies are inferred from the claim text.