US 4,361,887 AGranted

Semiconductor light emitting element

AssigneeHitachi, Ltd.

InventorsMichiharu Nakamura, Motohisa Hirao, Shigeo Yamashita, Tadashi Fukuzawa, Junichi Umeda

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Abstract

A semiconductor laser light emitting element comprises a semiconductor substrate, a laminate region of semiconductor layers having at least a first, a second and a third semiconductor layer formed over the substrate and having a p-n junction defined therein. The first and third semiconductor layers have smaller refractive indices and greater forbidden band gaps than the second semiconductor layer and are opposite in conductivity type to each other. Provided are on the substrate a field effect transistor section having first and second electrodes and a gate electrode disposed between the first and second electrodes, a means for serving as an optical resonator for emitting light in the lengthwise direction of the p-n junction. A means is formed on one surface of the laminate region for injecting current into the third semiconductor layer, the current injection means is short-circuited with the first electrode of the field transistor section and a means is formed on the substrate for receiving the current injected from the current injecting means.

Claims9

Dependent claims

A semiconductor light emitting element comprising:

a semiconductor substrate,
a laminate region of semiconductor layers having at least a first, a second and a third semiconductor layer formed over said substrate and having a p-n junction defined therein, said first and third semiconductor layers having smaller refractive indices and greater forbidden band gaps than said second semiconductor layer and being opposite in conductivity type to each other to determine laser oscillation,
a field effect transistor section comprising a fourth semiconductor layer having a high resistivity and formed over said third semiconductor layer and
a fifth semiconductor layer formed on said fourth semiconductor layer, said
field effect transistor section having first and second electrodes and a gate electrode disposed between said first and second electrodes formed on said fifth layer,
means for serving as an optical resonator for emitting light in the lengthwise direction of said p-n junction, and
first means formed on one surface of said laminate region and second means formed on said substrate for injecting current into said third semiconductor layer, said first means for injecting current being short-circuited with said first electrode of said field effect transistor section.

4 more elements

A semiconductor light emitting element comprising:

a semiconductor substrate,
a laminate region of semiconductor layers having at least a first, a second and a third semiconductor layer formed over said substrate and having a p-n junction defined therein, said first and third semiconductor layers having smaller refractive indices and greater forbidden band gaps than said second semiconductor layer and being opposite in conductivity type to each other to determine laser oscillation,
a field effect transistor section having first and second electrodes and a gate electrode disposed between said first and second electrodes,
means for serving as an optical resonator for emitting light in the lengthwise direction of said p-n junction,
first means formed on one surface of said laminate region and second means formed on said substrate for injecting current into said third semiconductor layer, said first means for injecting current being short-circuited with said first electrode of said field effect transistor section wherein said field effect transistor section comprises a fourth semiconductor layer having a high resistivity and formed on said substrate, a fifth semiconductor layer formed on said fourth layer, a gate electrode formed on said fifth layer, and a first and a second electrode formed on both sides of said gate electrode on said fifth layer.

2 more elements

Dependencies are inferred from the claim text.