Sputtering method and apparatus utilizing improved ion source
AssigneeVac-Tec Systems, Inc.
InventorCharles F. Morrison, Jr.
Life of this patent
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Abstract
Method and apparatus for sputtering an element with a magnetron plasma source where a plasma is formed between two electrostatic field defining surfaces of the source and a generator anode disposed adjacent the plasma ejects it toward the element to be sputtered. Various applications are described including selective coating of substrates of different electrical conductivity, substrate cleaning, ion milling, retrieval of expensive or dangerous coating materials, heating with little loss in the heat source, sputtering with reactive ions, sensitization or charge neutralization, and pumping of active gases.
Claims25
Sputtering apparatus comprising
- at least one element to be sputtered;
- at least one plasma source for generating a plasma from at least one ionizable gas where at least some of the charged particles of the plasma sputter the element, said plasma source including
- first and second electrostatic field defining surfaces at approximately the same potential;
- means for generating a magnetic field having lines of force which pass through said first and second electrostatic field defining surfaces;
- a generator anode disposed adjacent that portion of the magnetic field between said first and second electrostatic field defining surfaces;
- means for establishing an electric field between the generator anode and said first and second electrostatic field defining surfaces where at least portions of the electric and magnetic fields are substantially perpendicular to one another
- whereby said plasma is formed between said first and second electrostatic field defining surfaces and ejected away from the generator anode.
A sputtering method comprising the steps of
- providing at least one element to be sputtered;
- providing a plasma source for generating a plasma from at least one ionizable gas where at least some of the charged particles of the plasma sputter the element and where the plasma is generated by the steps of
- establishing first and second electrostatic field defining surfaces at approximately the same potential;
- generating a magnetic field having lines of force which pass through said first and second electrostatic field defining surfaces;
- providing a generator anode disposed adjacent that portion of the magnetic field between said first and second electrostatic field defining surfaces;
- establishing an electric field between the generator anode and said first and second electrostatic field defining surfaces where at least portions of the electric and magnetic fields are substantially perpendicular to one another
- whereby said plasma is formed between said first and second electrostatic field defining surfaces and ejected away from said generator anode.
Dependencies are inferred from the claim text.