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AssigneeHitachi, Ltd.
InventorsToshihisa Tsukada, Eiichi Maruyama, Toru Baji, Saburo Ataka, Yoshinori Imamura, Akira Sasano, Masaharu Kubo, Norio Koike, Shusaku Nagahara
Estimating the term…
In a solid-state imaging device having a plurality of photosensitive portions and a semiconductor substrate which includes at least scanning means for scanning the photosensitive portions, the photosensitive portions including a layer of a photosensitive material overlying the semiconductor substrate and a transparent electrically conductive film overlying the photosensitive material layer; a solid-state imaging device characterized in that the photosensitive material is an amorphous material whose indispensable constituent is silicon and which contains hydrogen. The hydrogen content of the photosensitive material is preferably 5 atomic-% to 30 atomic-%, especially 10 atomic-% to 25 atomic-%.
In a solid-state imaging device having a plurality of photosensitive regions and a semiconductor substrate which includes at least one scanning means for scanning the photosensitive regions, the photosensitive regions including at least a layer of a photosensitive material extending over the semiconductor substrate and a transparent electrically conductive film extending over the photosensitive material layer;
Dependencies are inferred from the claim text.