Method of forming a solder interconnection capable of sustained high power levels between a semiconductor device and a supporting substrate
AssigneeInternational Business Machines Corporation
InventorsCharles Carpenter, Joseph F. Fugardi, Lawrence V. Gregor, Peter S. Grosewald, Morton D. Reeber
Life of this patent
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Abstract
A process for forming ball limiting metallurgy pad structure for a semiconductor device solder bond interconnection comprising: forming a conductive layer that is adherent to the semiconductor device passivating layer, forming a relatively thick layer of a material having a high thermal conductivity, forming a barrier layer that protects the high conductivity layer by physically preventing any interaction or alloying with the subsequent layers, and forming a layer of a material that is solder wettable.
Claims6
A process for forming an improved solder interconnection on a semiconductor device and supporting substrate that is resistant to thermal migration of metal atoms in the interconnection, comprising
- forming a solder wettable pad structure on the device that is in electrical contact with a device element by (a) depositing a layer of chromium on the surface of the device, (b) depositing a first layer of phased copper-chromium over said layer of chromium, (c) depositing a first layer of copper over said layer of phased copper-chromium, (d) depositing a second phased chromium-copper layer over the said first copper layer, and (e) depositing a second layer of copper over said second phased chromium-copper layer,
- depositing a thick layer of solder over the resultant pad structure,
- placing the device on a supporting substrate provided with a corresponding solder wettable pad,
- heating to join said pad on the device to the pad on the substrate.
Dependencies are inferred from the claim text.