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US 4,359,754 AGranted
Semiconductor device
AssigneeFujitsu Limited
InventorsMasahiro Hayakawa, Yutaka Hirano
Life of this patent
Estimating the term…
Abstract
A semiconductor device used, for example, for the amplification of microwave signals, comprising a plurality of semiconductor elements mounted on a base and connected parallel to each other in order to gain high output power, wherein the same type of corresponding electrodes of the adjacent semiconductor elements are directly connected to each other so that self oscillation does not occur in the device and the operation thereof is stable.
Claims6
A semiconductor device comprising
- a base,
- a plurality of chips mounted on said base, each said chip comprising at least one selected plurality of corresponding circuit elements, said corresponding circuit elements being present on each said chip,
- a respective external common electrode mounted on said base corresponding to each said selected plurality of corresponding circuit elements on said chips,
- a respective plurality of connecting wires for individually connecting in parallel each of said selected plurality of corresponding circuit elements to the respective external common electrode, and
- at least one bonding wire for directly connecting between two selected ones of the corresponding circuit elements on different ones of said chips of at least one of said selected pluralities of corresponding circuit elements,
- wherein self oscillation in the operation of said device is reduced by the short circuiting provided by each said bonding wire connecting between the corresponding circuit elements on different ones of said chips.
3 more elements
Dependencies are inferred from the claim text.