Method of producing a double layer having a hetero-junction for a storage electrode of a camera device
AssigneeHeimann GmbH
InventorBernd Heimann
Life of this patent
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Abstract
A double layer having a hetero-junction interface for a storage electrode of an electro-optical camera device is produced by vacuum vapor deposition of n-conductive cadmium selenide or cadmium sulfo-selenide onto a n.sup.+ -conductive signal electrode layer comprised of tin oxide. The cadmium material to be vapor deposited is admixed with a small amount of a glass additive, such as boron oxide, the admixture sintered in vacuum and thereafter the cadmium material is vapor-deposited onto the signal electrode without spattering. The resultant hetero-junction is substantially free of metallic cadmium and such double layer is particularly useful in a Vidicon target.
Claims12
A method of producing a double layer having a hetero-junction for a storage electrode of a camera device comprising:
- providing a first layer composed of a transparent semiconductor material having n.sup.+ -conductivity on a substrate;
- admixing at least one glass additive material consisting essentially of boron oxide with a cadmium material selected from the group consisting of cadmium selenide and cadmium sulfo-selenide and sintering the resultant admixture in a vacuum under a thermal treatment at a temperature ranging between about 750.degree. C. to 850.degree. C. so as to prevent substantially any metallic cadmium generated during said thermal treatment from precipitating onto a free surface of said first layer;
- and
- initiating vacuum vapor-deposition of said cadmium material onto said free surface of said first layer at a temperature ranging between about 700.degree. C. and 750.degree. C.
In a method of producing a double layer having a hetero-junction for a storage electrode of a camera device wherein:
- (a) a first layer composed of a transparent semiconductor material having n.sup.+ -conductivity is provided onto a substrate and functions as an electrically conductive signal electrode;
- (b) a second layer composed of a photo-conductive cadmium selenide or cadmium sulfo-selenide having n-conductivity is provided onto a free surface of said first layer;
- and
- (c) such second layer is deposited by means of vacuum vapor deposition,
- the improvement comprising:
- (d) admixing at least one glass additive material consisting essentially of boron oxide with a cadmium material to be vapor-deposited;
- (e) sintering the resultant admixture in a vacuum at a select temperature so as to prevent substantially any metallic cadmium that may be generated during sintering from precipitating onto a free surface of said first layer;
- and
- (f) initiating the vacuum vapor-deposition of the cadmium material at a temperature ranging between about 700.degree. C. and 750.degree. C.
In a method of producing a double layer having a hetero-junction for a storage electrode of a camera device wherein:
- (a) a first layer composed of a transparent semiconductor material having n.sup.+ -conductivity is provided onto a substrate and functions as an electrically conductive signal electrode;
- (b) a second layer composed of a photo-conductive cadmium selenide or cadmium sulfo-selenide having n-conductivity is provided onto a free surface of said first layer;
- and
- (c) such second layer is deposited by means of vacuum vapor deposition,
- the improvement comprising:
- (d) admixing at least one glass additive material consisting essentially of boron oxide with a cadmium material to be vapor-deposited;
- (e) sintering the resultant admixture in a first system under vacuum at a select temperature so as to prevent any metallic cadmium that may be generated during sintering from precipitating onto a free surface of said first layer;
- and
- (f) conducting said vacuum vapor-deposition of the cadmium material at a temperature ranging between about 700.degree. C. and 750.degree. C. in a second system under vacuum separate from said first system.
Dependencies are inferred from the claim text.