Semiconductor device
AssigneeAsahi Kasei Kogyo Kabushiki Kaisha
InventorsKaoru Takasuka, Tatsumi Arakawa, Fumio Matushita, Hidehiko Kobayashi
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Abstract
A novel semiconductor device having an oxide semiconductor layer between an amorphous silicon hydride and a metallic layer has been found to have an excellent collection efficiency for light, particularly, in the range of short wavelengths and a high energy conversion efficiency as compared with the conventional Schottky barrier semiconductor device and the semiconductor device having a MIS structure. Further, it has been found that the present novel semiconductor device has an excellent storage stability for a long period of time.
Claims6
A semiconductor device which comprises:
- an electrically conductive substrate;
- an amorphous silicon hydride layer having a thickness of 0.1 to 5 .mu.m on said substrate;
- an oxide semiconductor layer having a thickness of 50 to 500 A on a surface of said amorphous silicon hydride layer opposite said substrate;
- and
- a metallic layer having a thickness of 50 to 200 A on a surface of said oxide semiconductor layer opposite said amorphous silicon hydride layer.
Dependencies are inferred from the claim text.