Sputtering method of manufacturing film type light receiving element under controlled oxygen atmosphere

A method of manufacturing a film type light receiving element comprising the steps of:

• providing a substrate of quartz glass having an optically polished surface;
• forming belt-shaped electrodes by forming a chromium base layer in a belt-shape to a thickness of approximately 700 A and an Au film upon said chromium base;
• forming a layer of 5% As - 95% Se upon said belt-shaped electrode to a thickness of 2 .mu.m;
• forming a layer of 5% As - 20% Te - 75% Se upon the last-mentioned layer to a thickness of approximately 0.3 .mu.m;
• forming a layer of 5% As - 95% Se on the last-mentioned layer to a thickness of approximately 400 A;
• masking the device thus formed for producing an optically transmissive electrode;
• disposing the element thus formed in a magnetron type sputtering device using a 90% In.sub.2 O.sub.3 - 10% SnO.sub.2 sintered body as a target;
• providing a pressure in a vacuum chamber of said magnetron type sputtering device in which said element is disposed of no greater than 2.times.10.sup.-5 Torr;
• introducing oxygen into said chamber until the pressure therein is increased to approximately 2.5.times.10.sup.-4 Torr;
• introducing argon into said chamber until the pressure therein is approximately 3.5.times.10.sup.-3 Torr;
• pre-sputtering said element in said sputtering device;
• and forming an ITO film to a thickness in the range of 500 A to 5000 A.

A method of manufacturing a film type light receiving element comprising the steps of:

• providing a substrate of quartz glass having an optically polished surface;
• forming belt-shaped electrodes by forming a chromium base layer in a belt-shape to a thickness of approximately 700 A and an Au film upon said chromium base;
• forming a layer of 5% As - 95% Se upon said belt-shaped electrode to a thickness of 2 .mu.m;
• forming a layer of 5% As - 20% Te - 75% Se upon the last-mentioned layer to a thickness of approximately 0.3 .mu.m;
• forming a layer of 5% As - 95% Se on the last-mentioned layer to a thickness of approximately 400 A;
• masking the device thus formed for producing an optically transmissive electrode;
• disposing the element thus formed in a magnetron type sputtering device using an SnO.sub.2 sintered body as a target;
• providing a pressure in a vacuum chamber of said magnetron type sputtering device in which said element is disposed of no greater than 10.sup.-7 Torr;
• introducing oxygen into said chamber until the pressure therein is increased to approximately 2.times.10.sup.-4 Torr;
• introducing argon into said chamber until the pressure therein is approximately 3.5.times.10.sup.-3 Torr;
• pre-sputtering said element in said sputtering device;
• and forming an ITO film to a thickness in the range of 500 A to 5000 A.

A film type light receiving element comprising:

• an insulating substrate having a substantially smooth surface;
• belt-shaped metal electrodes formed on said smooth surface of said substrate;
• a photoconductive film disposed over said metal electrodes and portions of said surface of said substrate;
• and, an optically transmissive electrode film of tin oxide formed upon said photoconductive film by magnetron sputtering, said sputtering of said tin oxide being carried out in an atmosphere having an oxygen partial pressure at a value each that an electric current ratio for light and dark input intensities is at a peak value.

A film type light receiving element comprising:

• a substrate of quartz glass having an optically polished surface;
• belt-shaped electrodes having a chromium base layer in a belt-shape at a thickness of approximately 700 A and an Au film upon said chromium base;
• a layer of 5% As - 95% Se upon said belt-shaped electrode at a thickness of 2 .mu.m;
• a layer of 5% As - 20% Te - 75% Se upon the last-mentioned layer at a thickness of approximately 0.3 .mu.m;
• a layer of 5% As - 95% Se on the last-mentioned layer at a thickness of approximately 400 A;
• and, an optically transmissive electrode formed by masking the device thus formed and disposing the element in a magnetron type sputtering device using a 90% In.sub.2 O.sub.3 -10% SnO.sub.2 sintered body as a target, providing a pressure in a vacuum chamber of said magnetron type sputtering device in which said element is disposed of no greater than 2.times.10.sup.-5 Torr, introducing oxygen into said chamber until the pressure therein is increased to approximately 2.5.times.10.sup.-4 Torr, introducing argon into said chamber until the pressure therein is approximately 3.5.times.10.sup.-3 Torr, pre-sputtering said element in said sputtering device, and forming an ITO film to a thickness in the range of 500 A to 5000 A.

A film type light receiving element comprising:

• a substrate of quartz glass having an optically polished surface;
• belt-shaped electrodes having a chromium base layer in a belt-shape at a thickness of approximately 700 A and an Au film upon said chromium base;
• a layer of 5% As - 95% Se upon said belt-shaped electrode at a thickness of 2 .mu.m;
• a layer of 5% As - 20% Te - 75% Se upon the last-mentioned layer at a thickness of approximately 0.3 .mu.m;
• a layer of 5% As - 95% Se on the last-mentioned layer at a thickness of approximately 400 A;
• and, an optically transmissive electrode;
• formed by masking the device thus formed and and disposing the element in a magnetron type sputtering device using an SnO.sub.2 sintered body as a target, providing a pressure in a vacuum chamber of said magnetron type sputtering device in which said element is disposed of no greater than 10.sup.-7 Torr, introducing oxygen into said chamber until the pressure therein is increased to approximately 2.times.10.sup.-4 Torr, introducing argon into said chamber until the pressure therein is approximately 3.5.times.10.sup.-3 Torr, pre-sputtering said element in said sputtering device, and forming an ITO film to a thickness in the range of 500 A to 5000 A.