Method of fabrication of bubble domain device structures
AssigneeRockwell International Corporation
InventorsThomas R. Oeffinger, Robert F. Bailey, Tsutomu Kobayashi, John P. Reekstin
Life of this patent
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Abstract
A method of fabricating a microelectronic circuit device on a substrate by forming a layer of electrically and thermally conductive material (13) on a surface of a substrate (10). Channels are then etched in the layer of conductive material (13) to form patterns of the conductive material which are delineated from the remainder of the layer of conductive material. The channels are filled with an electrically insulating material (21, 22, 23) so as to form a substantially planar surface layer on the substrate. Finally, a microelectronic circuit device (e.g., 25) is formed on the substantially planar surface.
Claims29
A method of fabricating a microelectronic circuit device from a garnet substrate capable of maintaining magnetic bubble domains in the presence of a bias magnetic field comprising the steps of:
- forming a barrier layer composed of a dielectric glass on said substrate;
- forming a layer of electrically and thermally conductive material over said barrier layer and substantially the entire substrate;
- etching narrow grooves into said layer of electrically and thermally conductive material to said barrier layer to form a patterned arrangement;
- depositing a spacer layer of electrically nonconductive material of substantially uniform thickness over said layer of electrically and thermally conductive material;
- and
- depositing a layer of a magnetically operative material over said spacer layer.
A method of fabricating a microelectronic circuit device from a garnet substrate capable of maintaining magnetic bubble domains in the presence of a bias magnetic field comprising the steps of:
- forming an isolation layer composed of a dielectric glass on said substrate;
- forming a layer of electrically and thermally conductive material over said isolation layer and substantially the entire substrate;
- etching narrow grooves into said layer of electrically and thermally conductive material to said isolation layer to form a patterned arrangement;
- depositing a layer of electrically nonconductive material in said grooves such that the top surface of said layer of nonconductive material is coplanar with the top surface of said layer of conductive material;
- and
- forming microelectronic devices comprising magnetic operative elements on the surface of said layer of conductive material and said layer of nonconductive material.
A method of fabricating a microelectronic circuit device from a garnet substrate capable of maintaining magnetic bubble domains in the presence of bias magnetic field comprising steps of:
- forming an isolation layer composed of a dielectric glass on said substrate;
- forming a layer of electrically and thermally conductive material over said isolation layer and substantially the entire substrate;
- etching said layer of electrically and thermally conductive material to form first and second spaced apart regions, said first region extending over substantially the entire substrate and functioning as a heat sink;
- and
- forming microelectronic devices on said layer of conductive material.
A method of fabricating a microelectronic circuit device from a garnet substrate capable of maintaining magnetic bubble domains in the presence of bias magnetic field comprising steps of:
- forming a barrier layer composed of a dielectric glass on said substrate;
- forming a layer of electrically and thermally conductive material over said barrier layer and substantially the entire substrate;
- etching said layer of electrically and thermally conductive material to form first and second spaced apart regions, said first region extending over substantially the entire substrate and functioning as a heat sink;
- depositing a spacer layer of electrically nonconductive material of substantially uniform thickness over said layer of electrically and thermally conductive material;
- and
- depositing a layer of a magnetically operative material over said spacer layer.
Dependencies are inferred from the claim text.