Magnetic bubble memory with ion-implanted layer
AssigneeBell Telephone Laboratories, Incorporated
InventorTerence J. Nelson
Life of this patent
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Abstract
In ion-implanted bubble memories where a patterned ion-implanted layer defines the propagation paths and the special functional elements, a uniform additional ion implant layer provides for a high degree of control over the nucleation level in the bubble material. Design flexibility and high generator margins are achieved.
Claims8
A magnetic bubble memory including
- a magnetic host layer in which bubbles can be moved and a means for moving bubbles in said host layer,
- said memory being characterized by first and second ion-implanted layers in first and second planes respectively said first layer being uniform and for the purpose of suppressing hard bubbles and said second layer being patterned.
A magnetic memory including a host layer of material in which magnetic domains can be moved, a periodic pattern of ion-implanted regions in said layer adapted for moving domains in said layer in response to a varying magnetic field, said host layer including an ion-implanted layer of uniform thickness in addition to said periodic pattern, said implanted layer extending over at least an area large with respect to the period of said periodic pattern and for the purpose of suppressing hard bubbles.
Dependencies are inferred from the claim text.