Method of plasma etching a substrate
AssigneeRCA Corporation
InventorsKurt B. Kilichowski, Thomas R. Pampalone
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Abstract
A method of selectively removing a portion of a layer of material on a substrate by oxygen plasma etching utilizing a mask of a resist material comprising a poly(silane sulfone) copolymer.
Claims11
In a method of selectively removing portions of a layer of material from a surface of a substrate by oxygen plasma etching which comprises forming on the surface of said layer a predetermined pattern of a resist material resistant to oxygen plasma etching and etching that portions of said layer not covered by said resist material, the improvement which comprises using as said resist material a copolymer having repeating units represented by the formula ##STR2## wherein R is alkyl and n is an integer.
A method of forming an assembly comprising a substrate having thereon two layers of aluminum separated by a layer of insulating dielectric material wherein the layer of insulating dielectric material has vias in which there is contact between said layers of aluminum comprising:
- (a) forming a first layer of aluminum on said substrate;
- (b) forming a layer of insulating dielectric material on said first aluminum layer;
- (c) forming a pattern of a resist material on said insulating dielectric layer, said resist material comprising a copolymer having repeating units represented by the formula ##STR3## wherein R is alkyl and n is an integer;
- (d) removing the portions of said insulating layer not protected by said resist material with oxygen plasma etch thereby forming vias in said insulating layer;
- (e) removing said resist material from the surface of said insulating layer;
- and
- (f) forming a second layer of aluminum thereover so that there is contact between said aluminum layers in said vias.
Dependencies are inferred from the claim text.