Heteroepitaxy of germanium silicon on silicon utilizing alloying control
AssigneeMassachusetts Institute of Technology
InventorsJohn C. C. Fan, Ronald P. Gale
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Abstract
A method and apparatus is described for producing Ge or a Ge.sub.1-x Si.sub.x heteroepitaxy film on Si by depositing films of Ge or Ge.sub.1-x Si.sub.x on Si and subjecting the body so formed to a controlled temperature environment, wherein the body is rapidly (within a time period t.sub.o of more than about 100 microseconds) brought to a predetermined temperature within the alloy range of the deposited film but less than the melting point of Si. The body is then held at such temperature for a relatively short time not to exceed about 3 minutes, including the time period t.sub.o.
Claims5
The method of fabricating a heteroepitaxial film on silicon comprising the steps of:
- a. depositing a film of germanium on a surface of a silicon substrate to provide a germanium silicon body;
- b. bringing the temperature of the body up to its alloy temperature range but less than the melting point of the silicon substrate within a period of longer than 100 microseconds and maintaining the temperature of the body at a predetermined temperature within said range which will produce an alloy having a predetermined ratio of Ge to Si, the duration of this step (b) being less than about 3 minutes;
- and
- c. thereafter allowing the body to achieve room temperature.
The method of fabricating a heteropitaxial film on silicon comprising the steps of:
- a. co-depositing a film of germanium and silicon on a surface of a silicon substrate to provide a germanium silicon body;
- b. bringing the temperature of the body up to its alloy temperature range but less than the melting point of the silicon substrate within a period of longer than 100 microseconds and maintaining the temperature of the body at a predetermined temperature within said range which will produce an alloy having a predetermined ratio of Ge to Si, the duration of this step (b) being less than about 3 minutes.
The method of fabricating a heteroepitaxial Ge film on a Si substrate comprising:
- a. depositing a film of Ge.sub.1-x Si.sub.x where 0<.times.<1 and x is the atomic percentage of Si;
- on a Si substrate to form a Ge.sub.1-x Si.sub.x /Si body;
- b. subjecting the body to a predetermined temperature T.sub.max which is within the alloy temperature range of the film Ge.sub.1-x Si.sub.x but is below the melting point of Si;
- c. maintaining said body at said T.sub.max for a period of time not to exceed about 3 minutes, including the time (t.sub.o) it takes to bring said body to T.sub.max, where t.sub.o is not less than about 100 microseconds;
- and
- d. allowing the body to cool to room temperature.
Dependencies are inferred from the claim text.