Coating device with As.sub.2 -O.sub.3 -SiO.sub.2
AssigneeTexas Instruments Incorporated
InventorsAl F. Tasch, Jr., Horng-Sen Fu
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Abstract
A method for fabricating a metal oxide semiconductor device having at least one level of polycrystalline silicon interconnects and novel insulation layers for multilevel interconnects. In one embodiment, the fabrication processing includes forming a layer of arsenic doped glass as a multilevel interconnect system insulating layer. In another embodiment, the method includes the formation of a multilevel interconnect system insulating layer which includes the formation of a layer of undoped silicon dioxide as a barrier layer and then forming a layer of arsenic doped glass upon the undoped layer.
Claims4
A method of making a semiconductor device comprising the steps of:
- forming regions of another conductivity type in a substrate of one conductivity type;
- forming an insulator layer on said substrate;
- forming at least one layer of gates and gate interconnects on said insulating layer;
- forming a multilevel interconnect system insulating layer of arsenic doped glass on said layer of gates and gate interconnects;
- and
- reflowing said multilevel interconnect system insulating layer by heating said multilevel interconnect system insulating layer sufficiently to smooth said insulating layer.
Dependencies are inferred from the claim text.