Method of making solar cell
AssigneeSolarex Corporation
InventorJoseph Lindmayer
Life of this patent
Estimating the term…
Abstract
A silicon solar energy cell having improved anti-reflective properties and resistance to radiation is composed of a light receiving surface having spaced indentations in the form of inverted pyramids therein. The pyramids, which have their bases in the plane of the light-receiving surface, are produced by masking the surface with a layer resistant to attack by a silicon etchant, forming open regions in the mask, then etching the major surface through the exposed regions.
Claims9
A method of making a silicon solar cell having at least one major surface adapted to receive light impinging thereon and absorb and convert such light into electrical energy, comprising providing a silicon wafer having at least one major surface thereof subject to attack by a silicon etchant, masking said surface with a layer resistant to attack by said silicon etchant, said masking layer being formed with open regions therein that expose substantially symmetrical portions of said surface of said silicon wafer, etching said exposed portions of said surface through said open regions of said masking layer with said silicon etchant to produce indentations in said surface, said indentations being in the form of inverted pyramids the apices of which are located inwardly of and the bases of which lie substantially in the plane of said surface, and thereafter forming an electrical junction at said surface, said junction extending along said surface and inwardly thereof into said indentations.
A method of making a silicon solar cell having at least one major surface adapted to receive and absorb light impinging thereon and convert such light to electrical energy, comprising providing a silicon wafer having a major surface in the 1-0-0 plane of the crystalline silicon, said silicon being subject to attack by a silicon etchant, reacting said surface with an oxidizing agent to form a layer of an oxide of silicon overlying said surface, selectively etching said oxide layer on said surface with an oxide etchant that is not an etchant for silicon to form open regions in said oxide layer extending through said oxide layer to expose underlying portions of said major surface of said wafer, etching said exposed portions of said surface through said open regions in said oxide layer with a silicon etchant that is not an etchant for said oxide layer to produce indentations in said major surface, said indentations being in the form of inverted pyramids the apices of which are located inwardly of and the bases of which lie substantially in the plane of said surface, and thereafter forming an electrical junction at said surface, said junction extending along said surface and inwardly thereof into said indentations.
Dependencies are inferred from the claim text.