Method for fabricating via holes in a semiconductor wafer
AssigneeRCA Corporation
InventorsSaligrama N. Subbarao, Ho-Chung Huang
Life of this patent
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Abstract
A circuit pattern is formed on a front side surface of a semiconductor wafer and an apertured photoresist pattern is formed over the circuit pattern. Via holes are then formed by laser irradiating the wafer at sites corresponding to the photoresist apertures. The back side surface of the wafer is next metallized and this surface is adhered to a plating block by means of an adhesive layer. Electrical connection between the substrate and plating block is then made, the via holes are electroplated, and the substrate is separated from the plating block and adhesive layer.
Claims7
A method for fabricating a conductive via hole in a semiconductor wafer, comprising:
- forming a layer of apertured photoresist on a first wafer surface;
- laser drilling a via hole through said wafer, at a site corresponding to said photoresist aperture;
- metallizing a second wafer surface opposing the first surface;
- placing the second wafer surface on an adhesive layer on a plating block;
- electrically connecting the second surface metallization to the plating block;
- electroplating through the via hole;
- and
- separating the wafer from the plating block and adhesive layer.
Dependencies are inferred from the claim text.