Process of reducing density of fast surface states in MOS devices

A process for reducing the density of fast surface states in MOS devices, such as surface-charge-coupled devices (SCCDs), comprising:

• providing a MOS device having a Si-SiO.sub.2 interface region with the SiO.sub.2 defining a free surface of such device and having electrodes therein;
• depositing a relatively thin amorphous layer comprised of silicon, hydrogen and nitrogen from a reaction gas comprised of silanium and a nitrogen-containing gas at a given deposition temperature onto said SiO.sub.2 free surface of the device;
• and
• annealing the resultant structure in a non-oxidizing atmosphere for a relatively brief period of time at a temperature in excess of said given deposition temperature and below about 500.degree. C. whereby free valences at the Si-SiO.sub.2 interface region are saturated with hydrogen and the density of fast surface states is reduced.