Semiconductor power amplification circuit
AssigneeNippon Electric Co., Ltd.
InventorsHirokazu Fukaya, Hisashi Togari
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AssigneeNippon Electric Co., Ltd.
InventorsHirokazu Fukaya, Hisashi Togari
Estimating the term…
The present invention prevents the destruction of an output transistor when the output terminal of a single-ended push-pull type power amplification circuit connects to a ground line or other section to form a short circuit. That is, the base-emitter of a current-detection transistor of the same conduction type as that of the transistor to be protected is connected between the base and emitter of the output transistor to be protected. The collector current of this current-detection transistor is applied to a current-voltage conversion means through a current mirror circuit, and the voltage of the current-voltage conversion means is compared with that of the output terminal by a comparator transistor. With the output of the comparator transistor, the supply of a base current to the transistor to be protected is stopped.
A semiconductor power amplification circuit comprising:
A power amplification circuit comprising;
Dependencies are inferred from the claim text.