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AssigneesNippon Hoso Kyokai, Hitachi, Ltd.
InventorsKeiichi Shidara, Naohiro Goto, Tatsuro Kawamura, Eikyu Hiruma, Yohitsumu Ikeda, Kenkichi Tanioka, Tadaaki Hirai, Yukio Takasaki, Chushirou Kusano, Tsuyoshi Uda, Yasuhiko Nonaka
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A photoconductive target having an electrode and a P-type conductive layer mainly made of Se and making rectifying contact at an interface with the electrode, with at least Te being doped in a portion of the P-type conductive layer. At least one metal fluoride forming shallow levels is doped in the region where the signal current is generated for the most part of the P-type conductive layer with an average concentration of not less than 50 ppm and not more than 5% by weight. The metal fluoride is preferably at least one selected from the group consisting of LiF, NaF, MgF.sub.2, CaF.sub.2, BaF.sub.2, AlF.sub.3, CrF.sub.3, MnF.sub.2, CoF.sub.2, PbF.sub.2, CeF.sub.3 and TlF. The high light sticking of the photoconductive target can thus be considerably reduced.
A photoconductive target having an electrode and a P-type conductive layer mainly made of Se and having rectifying contact at an interface with said electrode, a portion of said P-type conductive layer being added with at least Te, at least one metal fluoride forming shallow levels being doped in the region where the signal current is generated for the most part of said P-type conductive layer with an average concentration of not less than 50 ppm and not more than 5% by weight.
Dependencies are inferred from the claim text.