Semiconductor device and method of manufacturing the same

Abstract

A semiconductor device utilizing amorphous Si.sub.1-x C.sub.x (0.ltoreq..times..ltoreq.1) containing hydrogen. Through a high frequency glow discharge process or a high frequency sputtering process, the composition x is varied to form a heterojunction between amorphous Si.sub.1-x C.sub.x layers, and electrodes are mounted to the layers to complete the device. The amorphous material is desirably selected to have a forbidden band width of 1.7 to 3.2 eV so that the sensitivity of the device can cover the visible range. Because of the amorphous layers, freedom of type and shape of the substrate of the device is large. The dark resistance of the layers is large to improve the photoconductive characteristics of the semiconductor device.

Dependencies are inferred from the claim text.