Electron bombarded semiconductor device with doubly-distributed deflection means
AssigneeWatkins-Johnson Company
InventorsCarroll B. Norris, Jr., Aris Silzars, David J. Bates
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Abstract
An electron bombarded semiconductor amplifier including an elongated envelope having an electron gun projecting a sheet electron beam towards a distributed element semiconductor target which propagates an output signal including a single extended area semiconductor diode or a plurality of series-connected semiconductor diodes which are reverse biased and a doubly-distributed deflection means adapted to receive an input signal and cooperate with said sheet electron beam to deflect the beam in accordance with an input signal in synchronism with electron beam velocity and target signal propagation velocity to strike the target and generate an amplifier output signal.
Claims26
An electron bombarded device comprising an evacuated envelope, an electron gun positioned in said envelope, said gun serving to form and project a sheet electron beam with a predetermined velocity, a target spaced from said electron gun to receive said beam, doubly-distributed beam deflection means adapted to receive an input signal disposed between said electron gun and said target in cooperative relationship with said beam to deflect the beam in accordance with said input signal, said deflection means serving to propagate the input signal across said sheet beam at a predetermined velocity and along said sheet beam at said predetermined velocity to interact with and deflect the electrons in the beam in accordance with the input signal.
An electron bombarded device comprising an evacuated envelope, an electron gun positioned in said envelope, said gun serving to form and project a sheet electron beam, a target spaced from said electron gun to receive said beam, said target comprising a distributed semiconductor target adapted to receive said electron beam and generate an output signal, doubly-distributed beam deflection means adapted to receive an input signal disposed between said electron gun and said target in cooperative relationship with said beam, said doubly distributed beam deflection means serving to propogate the input signal across the sheet beam a first predetermined velocity and along the beam at substantially the velocity of the beam, to deflect the beam in accordance with an input signal and output coupling means for transmitting the output signal from said target.
An electron bombarded device comprising an evacuated envelope, an electron gun positioned in said envelope, said gun serving to form and project a sheet electron beam with predetermined velocity, a distributed semiconductor target spaced from said electron gun to receive said beam and generate an output signal which propagates along said target, doubly distributed beam deflection means adapted to receive an input signal disposed between said electron gun and said target in cooperative relationship with said beam to deflect the beam in accordance with said input signal, said deflection means serving to propagate the input signal across said sheet beam at a velocity corresponding to the velocity of propagation of signals in the target and along such sheet beam at said predetermined beam velocity.
Dependencies are inferred from the claim text.