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US 4,323,590 AGranted
Method for improving switch contacts, in particular for vacuum switches
AssigneeHazemeijer B. V.
InventorJoseph H. Lipperts
Life of this patent
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Abstract
Method for improving switch contacts in particular enhancing the voltage endurance, lowering the chopper level and improving the electrical conductivity for the use in vacuum switches in which ions are implanted of material improving the above said characteristics, at least in the surface area of the switch contacts where upon switching action a discharge is generated.
Claims5
A method for forming vacuum switch contacts, comprising:
- implanting ions of a material, or a combination of materials, taken from the group consisting of Cr, Ti, Be, Si, Ni, or Ta, into the discharge area of switch contacts to a depth of 0.1 to 1.0 microns;
- and
- continuing said ion implantation until the concentration of said ion material amounts to at least 10% by weight of the switch contact.
Dependencies are inferred from the claim text.