Smear and/or blooming in a solid state charge transfer image pickup device
AssigneeNippon Electric Co., Ltd.
InventorYasuo Ishihara
Life of this patent
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AssigneeNippon Electric Co., Ltd.
InventorYasuo Ishihara
Estimating the term…
Charges are accumulated in photosenstive elements on a semiconductor substrate and are transferred into a memory portion or to vertical shift registers, with transfer occurring at a high speed. The charges produce an output series of electrical signals which are delivered at a normal speed. The memories and similar portions of the substrate may be completely light-shielded. An amount of the charges flowing into the first vertical shift register may be made extremely small due to the high-speed transfer, in order to minimize a "smear" phenomenon (i.e., charges which stray through the integrated semiconductor material). Also, an intensive incident light might cause a charge overflow (called "blooming") from the photosensitive elements into the nearby first vertical shift register currently transferring the charges. By operating the first vertical shift register at a high speed, the charges of one picture field may be stored temporarily in the memory portion to reduce the use time of the first vertical shift register. Thus, the remaining available use time of the first vertical shift register may be employed to discard the charges collected undesirably in the first vertical shift registers.
A charge transfer image pickup device comprising:
A solid-state image pickup device formed in a semiconductor substrate comprising:
An image pickup apparatus comprising:
An integrated semiconductor circuit comprising means for accumulating charges in response to light incident thereon, said accumulative means being arranged to provide one TV picture field, means for transferring charges through said semiconductor circuit at a first speed in order to derive a series of electrical output signals which are delivered at a second speed which is slower than said first speed, whereby an amount of charges flowing through said semiconductor circuit may be made extremely small due to the transfer at said first speed in order to minimize a smear phenomenon, and means responsive to said second speed for discarding any undesirable charges which may be collected in the semiconductor material.
Dependencies are inferred from the claim text.