US 4,322,571 A · Solar cells and methods for manufacture thereof

Abstract

An improved light transducer such as a solar cell and, especially, a concentrator solar cell, together with processes for forming the same which permit the formation of improved light transducers characterized by their high thermal stability and by optimized impurity atom dispersion zones at the surface of either a p-type or an n-type substrate--such, for example, as a silicon substrate--defining: (i) a thermally stable deep junction with relatively high surface concentrations of dopant dispersed in those areas where metallic electrodes are to be formed, thus providing excellent ohmic contact characteristics in such areas; and (ii), an efficient energy conversion shallow junction with relatively lower surface concentrations of dopant in the inter-electrode photoactive regions of the cell, with such inter-electrode photoactive regions preferably being texturized, thereby optimizing current generation per unit of incident radiation and minimizing reflection losses. More particularly, a deep junction (on the order of 0.5 .mu.m or greater) is first formed throughout the substrate's entire near-surface area which is to be exposed to incident radiation; such deep junction is then entirely removed in the inter-electrode regions of the substrate by subjecting such regions to an acid etch, preferably with a texturizing etchant but, in some instances, with a polish etchant; and, a relatively uniform shallow junction (on the order of 0.3 .mu.m.+-.0.1 .mu.m) is then formed in the etched inter-electrode near-surface regions either (i) by subjection of the substrate to a gas diffusion dopant process, or (ii), by conventional ion implantation techniques.

Claims64

Dependent claims

The method of forming a light transducer having a plurality of contact areas and a plurality of photoactive areas from a wafer-like semiconductor substrate comprising the steps of:

(a) dispersing dopant impurities into the near-surface region of the semiconductor substrate to form a deep dispersion layer having high surface concentrations of dopant impurities and having a chemical potential different from the chemical potential of the substrate;
(b) masking selected regions of the substrate corresponding to the contact areas of the light transducer;
(c) entirely removing the deep dispersion layer in the unmasked regions of the substrate corresponding to the photoactive regions of the light transducer while leaving raised mesa-like contact areas containing a deep dispersion layer of dopant impurities in the masked regions of the substrate;
(d) dispersing dopant impurities into the near-surface regions of the substrate inter-contact regions of the light transducer to form a relatively shallow dispersion layer having relatively lower surface concentrations of dopant impurities and having a chemical potential different from the chemical potential of the substrate;
and,
(e) forming electrodes on the contact areas of the substrate.

3 more elements

The method of forming a light transducer having a pluarlity of contact areas and a pluarlity of photoactive areas from a wafer-like semiconductor substrate comprising the steps of:

(a) dispersing dopant impurities into the nearsurface region of the semiconductor substrate to form a deep dispersion layer having high surface concentrations of dopant impurities and having a chemical potential different from the chemical potential of the substrate;
(b) masking selected regions of the substrate corresponding to the contact areas of the light transducer;
(c) etching the unmasked regions of the substrate with a texturizing etchant to:
(i) entirely remove the deep dispersion layer in the unmasked regions of the substrate corresponding to the photoactive regions of the light transducer while leaving raised mesa-like contact areas containing a deep dispersion layer in the masked regions of the substrate;
and,
(ii) form a texturized completely undoped surface in the unmasked regions intermediate the raised mesa-like contact areas;
(d) dispersing dopant impurities into the undoped near-surface regions of the substrate in the inter-contact regions of the light transducer to form a relatively shallow dispersion layer of substantially uniform depth on the irregular texturized surface and having relatively low surface concentrations of dopant impurities and a chemical potential different from the chemical potential of the substrate;
and,
(e) forming electrodes on the contact areas of the substrate.

6 more elements

The method of forming a light transducer having a plurality of contact areas and a plurality of photoactive areas from a wafer-like p-type semiconductor substrate having a high percentage of undesired impurities and/or dislocations contained therein comprising the steps of:

(a) subjecting a surface of the substrate to a high temperature gas diffusion dopant process with an n-type dopant for a period sufficient to form a deep n.sup.+ diffusion layer in the near-surface regions of the substrate with undesired impurities and/or dislocations contained in the substrate being gettered into the relatively deep n.sup.+ diffusion layer and with the deep n.sup.+ diffusion layer having a chemical potential different from the chemical potential of the substrate;
(b) masking selected regions of the substrate corresponding to the contact areas of the light transducer;
(c) entirely removing the deep n.sup.+ diffusion layer, including the undesired impurities and/or dislocations contained therein, in the unmasked regions on the light transducer while leaving raised mesa-like contact areas containing a deep n.sup.+ diffusion layer in the masked regions of the substrate;
(d) dispersing n.sup.+ dopant impurities into the nearsurface regions of the substrate in the inter-contact regions of the light transducer to form a relatively shallow n.sup.+ dispersion layer having relatively lower surface concentrations of n.sup.+ dopant impurities and having a chemical potential different from the chemical potential of the substrate;
and,
(e) forming electrodes on the contact areas of the substrate.

3 more elements

(a) subjecting a surface of the substrate to a high temperature gas diffusion dopant process with an n-type dopant for a period sufficient to form a deep n.sup.+ diffusion layer in the near-surface regions of the substrate with undesired impurities and/or dislocations contained in the substrate being gettered into the relatively deep n.sup.+ diffusion layer and with the deep n.sup.+ diffusion layer having a chemical potential different from the chemical potential of the substrate;
(b) masking selected regions of the substrate corresponding to the contact areas of the light transducer;
(c) etching the unmasked regions of the substrate with a texturizing etchant to:
(i) entirely remove the deep n.sup.+ diffusion layer, including the undesired impurities and dislocations contained therein, in the unmasked regions of the substrate corresponding to the photoactive regions of the light transducer while leaving raised mesa-like contact areas containing a deep n.sup.+ diffusion layer in the masked regions of the substrate;
and,
(ii) form a texturized completely undoped surface in the unmasked regions intermediate the raised mesa-like contact areas;
(d) dispersing dopant impurities into the undoped near-surface regions of the substrate in the inter-contact regions of the light transducer to form a relatively shallow n.sup.+ dispersion layer having relatively lower surface concentrations of n-type dopant impurities and having a chemical potential different from the chemical potential of the substrate;
and,
(e) forming electrodes on the contact areas of the substrate.

6 more elements

An improved light transducer suitable for use as a solar cell comprising, in combination, a wafer-like semiconductor substrate, said substrate having:

a first relatively deep dispersion layer of dopant impurities formed in the near-surface regions of said substrate with said deep dispersion layer having relatively high surface concentrations of dopant impurities and defining a relatively deep junction at the interface of said dispersion layer and said substrate defining regions of differing chemical potential in said substrate and in said dispersion layer;
a plurality of spaced texturized surface areas formed on said substrate by complete removal of spaced areas of said first dispersion layer with a texturizing etchant and defining raised, spaced, mesa-like contact areas intermediate said spaced texturized surface areas;
a second relatively shallow dispersion layer of dopant impurities formed in the near-surface regions of said texturized surface areas with said shallow dispersion layer having a substantially uniform depth and defining a relatively shallow junction at the interface of said shallow dispersion layer and said substrate defining regions of differing chemical potential in said substrate and said shallow dispersion layer;
and, electrodes formed on said raised mesa-like contact areas and on the surface of said substrate remote from said raised contact areas.

1 more element

Dependencies are inferred from the claim text.

Solar cells and methods for manufacture thereof

Life of this patent

Solar cells and methods for manufacture thereof

Life of this patent

Abstract

Claims64