Back to results
US 4,318,058 AGranted
Semiconductor diode laser array
AssigneeNippon Electric Co., Ltd.
InventorsIkuo Mito, Shigeo Matsushita, Kohroh Kobayashi
Life of this patent
Estimating the term…
Abstract
An integrated laser array is disclosed in which a plurality of semiconductor lasers are integrated on a semiconductor multi-layer crystal that includes an active layer in which the band gap energy varies in one direction. By means of this arrangement a plurality of semiconductor lasers, which differ in their respective oscillating wavelengths over a relatively broad range, can be formed on a common substrate.
Claims7
A monolithically integrated laser array capable of providing light rays of a plurality of wavelengths, said array comprising a semiconductor body having:
- a semiconductor substrate;
- a multi-layer structure formed on said substrate,
- said multi-layer structure comprising an active layer, a first cladding layer, and a second cladding layer separated from said first cladding laser by said active layer,
- said active layer being composed of a mixed crystal, the energy band gap of said active layer varying in a predetermined first direction of a plane lying in said active layer;
- means for electrically isolating regions of said multi-layer structure in parallel to a second directon perpendicular to said predetermined first direction and for providing a plurality of laser diodes;
- optical resonator means composed of two cleaved faces obtained by cleaving said semiconductor body perpendicularly to the direction of the optical axes of said laser diodes;
- said isolating means extending into said first cladding layer through said active and said second cladding layers;
- and
- means for supplying a voltage to forward bias each of said laser diodes.
6 more elements
Dependencies are inferred from the claim text.