US 4,317,127 AGranted

Static induction transistor and integrated circuit utilizing same

AssigneeZaidan Hojin Handotai Kenkyu Shinkokai

InventorJun-ichi Nishizawa

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Abstract

A static induction type semiconductor device containing a normal type static induction transistor having the structure that a source region, gate regions and drain regions are arrayed in a main surface of a channel-constituting semiconductor region, and that a sub-drain region is formed in the opposite surface of the channel-constituting semiconductor region so as to extend from a position corresponding to the source region up to a position corresponding to the drain regions. The provision of this sub-drain region makes it possible to realize easy isolation of a normal vertical structure static induction transistor in a semiconductor wafer, the normal vertical structure contributing to increasing the transconductance, and to improving the speed of operation, without sacrificing a high packing density.

Claims24

Dependent claims

A static induction type semiconductor integrated circuit device containing at least a static induction transistor including a source, a channel, a gate and a drain region, and a field effect transistor, the static induction transistor comprising:

a first semiconductor region of a low resistivity having a first conductivity type;
a second semiconductor region of a high resistivity having said first conductivity type and formed on and adjacent to said first semiconductor region and having a first main surface on that side located away from the side located adjacent to said first semiconductor region;
a third semiconductor region of a low resistivity having said first conductivity type and formed in said first main surface of said second semiconductor region to face a first portion of said first semiconductor region, sandwiching a first portion of said second semiconductor region between this third semiconductor region and said first semiconductor region and serving as a source region;
a fourth semiconductor region having a second conductivity type opposite to said first conductivity type and formed adjacent to at least part to said first portion of the second semiconductor region and serving as a gate region and defining a current path formed with said first portion between said first and third semiconductor regions and effectively isolated from the remaining portion of the second semiconductor region;
at least one charge carrier deriving means formed in said first main surface of said second semiconductor region in a second portion of said remaining portion and facing a second portion of said first semiconductor region;
and
means for isolating said first semiconductor region excepting the area exposed to said second semiconductor region, and said field effect transistor having a drain semiconductor region which is merged in said gate region of said static induction transistor.

4 more elements

A static induction type semiconductor device including a junction gate static induction transistor and an insulated-gate type transistor formed in a monolithic semiconductor chip, the static induction transistor comprising:

a semiconductor substrate of one conductivity type;
an epitaxial semiconductor layer of the other conductivity type opposite to said one conductivity type having a high resistivity and formed on said substrate;
a heavily-doped sub-drain semiconductor region of said other conductivity type embedded in the semiconductor chip in the vicinity of the interface between said substrate and said epitaxial layer and being in contact with said epitaxial layer;
a heavily-doped gate semiconductor region of said one conductivity type formed in said epitaxial layer, extending from a surface of said epitaxial layer toward said substrate above a portion of said sub-drain region, and defining a current channel region formed of a first portion of said epitaxial layer;
a heavily-doped source semiconductor region of said other conductivity type formed in said channel region adjacent to said surface of said epitaxial layer;
at least one Schottky metal drain electrode formed on a second portion of said epitaxial layer located above another portion of said sub-drain region, the insulated-gate type transistor comprising:
a third portion of said epitaxial layer located adjacent to said gate region and consisting of a channel region of the insulated-gate type transistor;
an insulating film formed on said third portion of said epitaxial layer;
a conductive gate electrode formed on said insulating film;
a heavily-doped other source semiconductor region of said one conductivity type formed in said epitaxial layer located adjacent to said third portion and adjacent to said surface of the epitaxial layer;
and
said gate region of said static induction transistor constituting a drain region of the insulated-type transistor.

9 more elements

A static induction type semiconductor integrated circuit device containing at least a static induction transistor including a source, a channel, a gate and a drain region and a bipolar transistor including an emitter, a base and a collector, the static induction transistor comprising:

a first semiconductor region of a low resistivity having a first conductivity type;
a second semiconductor region of a high resistivity having said first conductivity type and formed on and adjacent to said first semiconductor region and having a first main surface on that side located away from the side located adjacent to said first semiconductor region;
a third semiconductor region of a low resistivity having said first conductivity type and formed in said first main surface of said second semiconductor region to face a first portion of said first semiconductor region, sandwiching a first portion of said second semiconductor region between this third semiconductor region and said first semiconductor region and serving as a source region;
a fourth semiconductor region having a second conductivity type opposite to said first conductivity type and formed adjacent to at least part of said first portion of the second semiconductor region and serving as a gate region and defining a current path formed with said first portion between said first and third semiconductor regions and effectively isolated from the remaining portion of the second semiconductor region;
at least one current deriving means formed in said first main surface of said second semiconductor region in a second portion of said remaining portion and facing a second portion of said first semiconductor region;
and
means for isolating said first semiconductor region excepting the area exposed to said second semiconductor region, and the bipolar transistor comprising:
a collector semiconductor region which is merged in said gate region of said static induction transistor;
a base semiconductor region having said first conductivity type and disposed at least partially on that surface of said common gate-collector region located opposite to the side facing said first semiconductor region;
and
an emitter semiconductor region having said second conductivity type and disposed on that surface of said base region located opposite to the side facing said first semiconductor region,
whereby said bipolar transistor is constructed to protrude from said first main surface of said second semiconductor region.

9 more elements

A static induction type semiconductor device including a junction gate static induction transistor and a bipolar junction transistor formed in a monolithic semiconductor chip, the static induction transistor comprising:

a semiconductor substrate of one conductivity type;
and epitaxial semiconductor layer of the other conductivity type opposite to said one conductivity type having a high resistivity and formed on said substrate;
a heavily-doped sub-drain semiconductor region of said other conductivity type embedded in the semiconductor chip in the vicinity of the interface between said substrate and said epitaxial layer and being in contact with said epitaxial layer;
a heavily-doped gate semiconductor region of said one conductivity type formed in said epitaxial layer, extending from a surface of said epitaxial layer toward said substrate above a portion of said sub-drain region, and defining a current channel region formed of a first portion of said epitaxial layer;
a heavily-doped source semiconductor region of said other conductivity type formed in said channel region adjacent to said surface of said epitaxial layer;
and
at least one Schottky metal drain electrode formed on a second portion of said epitaxial layer located above another portion of said sub-drain region, and
the bipolar junction transistor comprising:
a base semiconductor region of said other conductivity type formed with at least part of another epitaxial layer formed on said epitaxial layer at least partially on said source and gate regions;
an emitter semiconductor region of said one conductivity type formed adjacent to said base region;
and
said gate region of the static induction transistor constituting a collector region of said bipolar junction transistor.

9 more elements

Dependencies are inferred from the claim text.