Apparatus for analyzing semiconductor memories

The method of physically locating and optically examining faulty cells in a semiconductor device by means of a scanning electron microscope comprising the steps of

• positioning a semiconductor module, including a matrix of cells, at a first viewing position in a scanning electron microscope,
• electrically scanning and addressing and charging each cell in the semiconductor module and displaying on an oscilloscope the scanned raster of cells and a first faulty cell therein,
• inducing a fault in a second cell in said module by means of the electron beam of said scanning electron microscope,
• electrically scanning and addressing each cell in said module and displaying said first and second faulty cells on the oscilloscope,
• mechanically moving said module in said microscope to a second position which tends to place the point of impingement of the electron beam of said microscope either on or closer to the location of said first faulty cell and inducing a fault in a third cell,
• electrically scanning and addressing each cell in the semiconductor module and displaying on an oscilloscope the scanned raster and said first and third faulty cells therein,
• whereby, if said first and third faulty cells coincide in position or are suitably close together as shown by the raster scan on said oscilloscope, then the operator of the microscope can visually inspect the first faulty cell to determine the reason for its being faulty.