Low temperature-sinterable dielectric composition and thick film capacitor using the same

A low temperature-sinterable dielectric composition of uniform mixture consisting of lead ferrotungstate, lead titanate, and manganese dioxide, characterized in that its sintered composition, prepared by firing the composition at 900.degree. C. for 10 minutes, is represented by the general formula

• A.Pb(Fe.sub.2/3 W.sub.1/3).sub.1-x Ti.sub.x O.sub.3 +B.MnO.sub.2
• wherein 0.005.ltoreq..times..ltoreq.0.30, A=0.95-0.9995 and B=0.0005-0.05, and has a relative dielectric constant of 3,400-9,500 at 25.degree. C., a dissipation factor (tan .delta.) of not higher than 5%, at 25.degree. C. and a specific resistance of at least 10.sup.9 .OMEGA..cm at 25.degree. C.

A thick film capacitor comprising a substrate plate, a lower electrode formed on the substrate plate, a dielectric layer formed on the lower electrode, and an upper electrode formed on the dielectric layer, characterized in that the dielectric layer is prepared from a low temperature-sinterable dielectric composition consisting of lead ferrotungstate, lead titanate and manganese dioxide, represented by the general formula

• A.Pb(Fe.sub.2/3 W.sub.1/3).sub.1-x Ti.sub.x O.sub.3 +B.MnO.sub.2
• wherein 0.005.ltoreq..times..ltoreq.0.35, A=0.95-0.9995 and B=0.0005-0.05.

A thick film capacitor comprising a substrate plate, a lower electrode formed on the substrate plate, a dielectric layer formed on the lower electrode, and an upper electrode formed on the dielectric layer, characterized in that the dielectric layer is prepared from a low temperature-sinterable dielectric composition consisting of lead ferrotungstate, lead titanate and manganese dioxide, represented by the general formula

• A.Pb(Fe.sub.2/3 W.sub.1/3).sub.1-x Ti.sub.x O.sub.3 +B.MnO.sub.2
• wherein 0.05.ltoreq..times..ltoreq.0.30, A=0.95-0.9995 and B=0.0005-0.05.