Growth of semiconductor compounds
AssigneeThe Post Office
InventorsJohn Haigh, Marc M. Faktor, Rodney H. Moss
Life of this patent
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Abstract
Semiconductor compounds which are alloys of group III-V compounds are grown by a liquid phase epitaxy method which includes heating growth apparatus in a reducing atmosphere while maintaining a solvent for the compound, a source of the group III-V compound and another element of the alloy separate from each other. After heating to reduce oxides, the element is added to the solvent, the source is brought into contact with the solvent and the resulting solution is brought into contact with a substrate to effect growth of the compound. Apparatus for carrying out the method is also described.
Claims8
Apparatus for growing semi-conductor compounds which are alloys of group III-V compounds by liquid phase epitaxy comprising a unitary sealable chamber having a loading region and a growth region, heating means associated with said growth region for heating same to a desired temperature, said loading region communicating with a compartment externally of said chamber, said compartment housing an oxidizable component of the compound to be grown, seal means provided on said compartment;
- manipulating means extended into said compartment through said seal means;
- a substrate carrier and growth boat located in said chamber, and manipulation means carried by said chamber and operable externally thereof for moving said carrier and boat between the two regions.
In an apparatus for growing semi-conductor compounds by liquid phase epitaxy which apparatus includes a chamber having a loading region and a growth region, said growth region having a boat and a substrate carrier, said boat being slidable in said growth region relative to said substrate carrier, said carrier having a surface for receiving a substrate on which a semi-conductor compound is to be grown, said boat having at least one well for receiving a suitable solvent which can be brought into contact with a substrate by relative sliding movement of the boat and carrier, a lateral upright wall of the boat being cut away to define an opening in communication with said well, said cut away portion defining a surface onto which a slice of semi-conductor material can be placed, said surface being so disposed that during use a semi-conductor slice can be moved from said surface from said surface onto the surface of a solvent in said well.
Dependencies are inferred from the claim text.