Semiconductor layer of oxygen depletion type cerium oxide or lead oxide
AssigneesHitachi, Ltd., Nippon Hoso Kyokai
InventorsMotoyasu Terao, Tadaaki Hirai, Eiichi Maruyama, Hideaki Yamamoto, Tsutomu Fujita, Naohiro Goto, Keiichi Shidara
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Abstract
A photoelectric device comprises a signal electrode, a layer of amorphous photoconductor containing 50 atomic percent or more of selenium and an N-type semiconductor layer made of a material selected from the group consisting of oxygen depletion type cerium oxide and oxygen depletion type lead oxide and disposed therebetween, which has a thickness greater than 8 nm and up to and including 500 nm and a Fermi level located within an energy range of 0.2 to 0.8 eV from the bottom of a conduction band.
Claims5
A photoelectric device comprising a signal electrode, and N-type semiconductor layer disposed adjacent said signal electrode, said semiconductor layer having a thickness greater than 8 nm and up to and including 500 nm and a Fermi level located within an energy range of 0.2 to 0.8 eV from the bottom of a conduction band and being made of a material selected from the group consisting of oxygen depletion type cerium oxide and oxygen depletion type lead oxide, and an amorphous photoconductor layer containing 50 atomic % or more of selenium disposed adjacent said N-type semiconductor layer.
A photoelectric device comprising a signal electrode, an N-type semiconductor layer disposed adjacent said signal electrode, said semiconductor layer having a thickness greater than 8 nm and up to and including 500 nm and a Fermi level located within an energy range of 0.2 to 0.8 eV from the bottom of a conduction band and being made of a material selected from the group consisting of oxygen depletion type cerium oxide and oxygen depletion type lead oxide, and an amorphous photoconductor layer containing 50 atomic % or more of selenium disposed adjacent said N-type semiconductor layer, and further comprising another electrode adjacent said amorphous photoconductor layer, said amorphous layer being sandwiched between said N-type semiconductor layer and said another electrode, and wherein an incident light ray is adapted to fall on said signal electrode.
Dependencies are inferred from the claim text.