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US 4,307,298 AGranted
Optically toggled bilateral switch having low leakage current
AssigneeBell Telephone Laboratories, Incorporated
InventorsMahmoud A. El Hamamsy, William C. King
Life of this patent
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Abstract
An optically toggled bilateral field effect transistor switch having a low leakage current is described. A high impedance path and, therefore, a low leakage current, is provided by a photovoltaically controlled field effect transistor.
Claims9
An optically toggled field effect transistor switch comprising:
- a first field effect transistor, said transistor having source, gate and drain electrodes;
- a first series connected photodiode array, said photodiode array producing a voltage, when illuminated, that controls said current through said first field effect transistor;
- first and second blocking diodes, said diodes each having a first electrode connected to one of said drain and source electrodes, respectively, said diodes each having a second electrode connected to said photodiode array;
- a first resistance, said first resistance being between said gate and source electrodes of said first field effect transistor of said first FET, CHARACTERIZED IN THAT said first resistance comprises a second field effect transistor, said second field effect transistor having drain, gate and source electrodes, and said switch further comprises means for controlling the current conduction state of said second field effect transistor.
1 more element
Dependencies are inferred from the claim text.