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US 4,306,951 AGranted
Electrochemical etching process for semiconductors
AssigneeInternational Business Machines Corporation
InventorsSteven W. Depp, Kurt E. Petersen
Life of this patent
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Abstract
A method of electrochemically etching a semiconductor to a predetermined contour includes positioning at least one electrode on one side of the semiconductor and then applying a voltage to the electrodes so as to generate a varying current density vertically through the semiconductor and thereby electrochemically etch the mask-free other side of the semiconductor.
Claims3
A method of electrochemically etching a semiconductor wafer to a predetermined contour comprising the steps of:
- (a) positioning an electrode pattern containing at least two electrodes in spaced relation on the first side of the semiconductor, and
- (b) applying a voltage to said pattern whereby the current density is varied vertically through the wafer by the spacing of the electrodes in said pattern and thereby electrochemically etch the mask-free second side of the semiconductor.
A method of electrochemically etching a semiconductor wafer to a predetermined contour comprising the steps of:
- (a) positioning an electrode pattern containing at least two electrodes in spaced relation on the first side of the semiconductor, and
- (b) applying different polarities and magnitudes of voltages to different electrodes in said pattern so as to generate a varying current density vertically through the wafer and thereby electrochemically etch the mask-free second side of the semiconductor.
Dependencies are inferred from the claim text.