Method of making electrode wiring regions and impurity doped regions self-aligned therefrom
AssigneeNippon Electric Co., Ltd.
InventorHiroshi Shiba
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Abstract
A semiconductor device suitable for a high-density integrated circuit is disclosed. The semiconductor device comprises an electrode wiring layer made of silicon with a substantially flat surface deposited on a major surface of a semiconductor substrate, the periphery of which is filled with an insulating layer produced by selectively oxidizing the silicon, a first impurity doped region formed in the semiconductor substrate in self-aligning relation with the electrode wiring layer, and a second impurity doped region coupled to the first impurity doped region and underlain the insulating layer.
Claims17
A method of manufacturing a semiconductor device comprising the steps of depositing a silicon layer on a semiconductor substrate selectively covered with a first insulating layer whereby at least one portion of the silicon layer is in contact with the exposed area of the semiconductor substrate, covering the surface of the silicon layer with an oxidation-resistant layer, forming a predetermined pattern of a mask material on the oxidation-resistant layer, introducing an impurity of a conductivity type opposite to that of the exposed area of the semiconductor substrate into the exposed area through a part of the portion of said silicon layer using the mask material, selectively removing the oxidation-resistant layer by using the mask material, selectively oxidizing the silicon layer to its entire thickness by using the retained oxidation-resistant layer as a mask whereby at least the part of the portion of the silicon layer not covered by the oxidation-resistant layer is oxidized, forming a first opposite conductivity type region in the exposed area of the semiconductor substrate by the impurity introduced therein, and introducing an impurity of the same conductivity type as the first opposite conductivity type region into the exposed area of the semiconductor substrate through a non-oxidized part of the silicon layer to form a second opposite conductivity type region in the exposed area in contact with the first opposite conductivity type region.
A method of manufacturing a semiconductor device comprising the steps of preparing a semiconductor substrate, forming an insulator film having at least one opening on a principal face of the semiconductor substrate, depositing a silicon layer on both the insulator film and the opening, depositing an oxidation-resistant film on the silicon layer, forming an etching-resistant layer having at least one opening, at least a part of the opening of the etching-resistant film being superposed on the opening of the insulator film, introducing an impurity into a selected portion of the substrate to form an impurity doped region utilizing the etching-resistant layer as a mask, patterning the oxidation-resistant film utilizing the etching-resistant layer as a mask, selectively oxidizing the silicon layer by utilizing the patterned oxidation-resistant film, removing the patterned oxidation-resistant film, thereby exposing a surface of the silicon layer, and forming a wiring layer in contact with the exposed surface of the silicon layer.
The method for fabricating a semiconductor device comprising the steps of preparing a semiconductor substrate having a principal surface selectively covered with a first insulating layer, depositing a silicon layer on the principal surface, depositing an oxidation-resistant layer on the silicon layer, depositing mask layer having a predetermined pattern on the oxidation-resistant layer, introducing an impurity into a selected portion of said substrate by utilizing the mask layer as a mask, patterning said oxidation-resistant layer by utilizing the mask layer of said oxidation-resistant layer, and oxidizing said silicon layer to its entire thickness by using the retained oxidation-resistant layer thereby to define a wiring pattern in the silicon layer.
A method for fabricating a semiconductor device comprising the steps of preparing a semiconductor substrate having a principal surface selectively covered with an insulator film, depositing a silicon layer on the principal surface of the substrate, depositing an oxidation-resistant layer on the silicon layer, forming a mask layer having a predetermined pattern on the silicon layer, introducing a first impurity into a portion of the semiconductor substrate through the oxidation-resistant layer and the silicon layer by using the mask layer as a mask, selectively removing portions of the oxidation-resistant layer not covered by the mask layer and portions of the oxidation-resistant layer located at peripheral edges of the predetermined pattern by using the mask layer as a mask, and selectively oxidizing the silicon layer to its entire thickness using the retained portion of the oxidation-resistant layer.
Dependencies are inferred from the claim text.