Method of directly manufacturing reticle patterns on chrome-coated plates by means of a pattern generator

A process for manufacturing a pattern on a substrate, said substrate comprising a transparent plate coated with an opaque layer, said process including the following steps:

• depositing an ultra-thin photosensitive resist layer upon said substrate, said resist being of a thickness which corresponds to the thinnest resonant resist which allows etching without defects according to the relationship ##EQU3## where e is the thickness of said resist in Angstroms, n is the resist index of refraction for the chosen wavelength (.lambda.) in Angstroms, and k is an integer within the range 0 to 4,
• prebaking said resist,
• exposing said substrate processed in accordance with the above to radiation consisting of said chosen wavelength .lambda. from a pattern generator in a predetermined desired configuration and then developing said resist and removing any undesired portion of said resist in accordance with said configuration to yield an aperture pattern in said resist,
• depositing a metal layer upon the structure,
• removing the portion of said metal coating resting upon the remainder of said resist by means of a lift-off step,
• etching said opaque layer through said aperture pattern made in the remaining portions of said metal layer, whereby a reversed contrast pattern remains with the desired configuration of fragments of said opaque layer remaining.

A process for manufacturing a pattern on a substrate, said process including the following steps:

• depositing a resist upon said substrate according to the relationship ##EQU4## where e is the thickness of said resist in Angstroms, n is the resist index of refraction for the chosen resist exposure wavelength (.lambda.), and k is an integer within the range 0 to 4,
• prebaking said resist,
• exposing said substrate processed in accordance with the above to radiation consisting of said chosen wavelength .lambda. from a source of a pattern in a desired configuration,
• and then developing said resist and removing the undesired portions of said resist in accordance with said pattern to yield an aperture pattern in said resist.