Ultra-high-frequency diode phase shifter usable with electronically scanning antenna
AssigneeThomson-CSF
InventorsMichel Baril, Vu San Hoang
Life of this patent
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Abstract
A four-state phase shifter for UHF waves comprises two O-.pi. phase-shifting elements of planar structure on a common substrate, these phase-shifting elements including a symmetrical and an asymmetrical transmission line which can be selectively coupled in one of two ways by the alternate blocking and unblocking of respective diodes for a relative phase reversal. The two phase-shifting elements are linked by two further transmission lines of different propagation constants which can be selectively activated, again with the aid of diodes, and which may be disposed on opposite faces of the substrate or may form part of a coplanar conductor array on the same substrate face.
Claims16
A four-state phase shifter for ultra-high-frequency waves comprising:
- a dielectric substrate with at least one flat surface supporting an array of planar conductors with parallel edges forming a plurality of UHF transmission paths with a common direction of propagation between an input end zone and an output end zone separated by an intermediate zone, said transmission paths including a first main line of symmetrical field structure in one of said end zones, a second main line of asymmetrical field structure in the other of said end zones, a first connecting line of symmetrical field structure traversing said intermediate zone, and a second connecting line of asymmetrical field structure traversing said intermediate zone, said connecting lines having electrical lengths giving rise to a differential phase angle .phi. differing significantly from 0, .pi. and any multiple thereof;
- first diode means at a junction of said one of said end zones with said intermediate zone provided with biasing means for selectively coupling said first main line to said first connecting line in a first and a second operating mode and to said second connecting line with relative phase inversion in a third and a fourth operating mode, respectively;
- and
- second diode means at a junction of said other of said end zones with said intermediate zone provided with biasing means for selectively coupling said first connecting line to said second main line with relative phase inversion in said first and second operating modes, respectively, and coupling said second connecting line to said second main line in said third and fourth operating modes, thereby transmitting microwave energy from said input zone to said output zone with a phase difference .pi. between said first and second operating modes, a phase difference .phi. between said first and third operating modes and a phase difference .pi.+.phi. between said first and fourth operating modes.
Dependencies are inferred from the claim text.